Single microwire transistors of oligoarenes by direct solution process.
نویسندگان
چکیده
Key Laboratories of Bioorganic Chemistry and Molecular Engineering and of Polymer Chemistry and Physics of Ministry of Education, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry, Peking UniVersity, Beijing 100871, China, and Institute of Polymer Optoelectronic Materials and DeVices, South China UniVersity of Technology, and Key Lab of Specially Functional Materials, Ministry of Education, Guangzhou 510640, China
منابع مشابه
Ambipolar organic field-effect transistors based on solution-processed single crystal microwires of a quinoidal oligothiophene derivative.
A simple and versatile solution-processing method based on molecular self-assembly is used to fabricate organic single crystal microwires of a low bandgap quinoidal oligothiophene derivative. Individual single crystal microwire transistors present well-balanced ambipolar behaviour with hole and electron mobilities as high as 0.4 and 0.5 cm(2) V(-1) s(-1), respectively.
متن کاملPalladium-catalyzed direct C-H arylations of dioxythiophenes bearing reactive functional groups: a step-economical approach for functional π-conjugated oligoarenes.
A Pd-catalyzed single-step C-H arylation of dioxythiophene derivatives bearing unprotected reactive functional groups (-OH, -COOH, -N3) in a phosphine-free manner has been developed. Various dioxythiopene-based oligoarenes with extended π-conjugation are obtained with good yields (up to 90%). These oligoarenes display suitable optical properties (absorption and emission maxima, quantum yields) ...
متن کاملSolution-processed, high-performance n-channel organic microwire transistors.
The development of solution-processable, high-performance n-channel organic semiconductors is crucial to realizing low-cost, all-organic complementary circuits. Single-crystalline organic semiconductor nano/microwires (NWs/MWs) have great potential as active materials in solution-formed high-performance transistors. However, the technology to integrate these elements into functional networks wi...
متن کاملModeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...
متن کاملConduction coefficient modeling in bilayer graphene based on schottky transistors
Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Journal of the American Chemical Society
دوره 129 41 شماره
صفحات -
تاریخ انتشار 2007